NTE464 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

NTE464 (P–Ch) & NTE465 (N–Ch)
Silicon Complementary MOSFET Transistors
Enhancement Mode for Switching Applications
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain–Gate Voltage, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current, I_G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/°C
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/°C
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Drain–Source Breakdown Voltage
Zero–Gate–Voltage Drain Current
Gate Reverse Current
ON Characteristics
V_(BR)DSX I_D = –10µA, V_GS = 0
I_DSS V_DS = –10V, V_GS = 0, T_A = +25°C
V_DS = –10V, V_GS = 0, T_A = +150°C
I_GSS V_GS = ±30V, V_DS = 0
Gate Threshold Voltage
Drain–Source On–Voltage
On–State Drain Current
V_GS(Th)
V_DS(on)
I_D(on)
V_DS = –10V, I_D = –10µA
I_D = –2mA, V_GS = –10V
V_GS = –10V, V_DS = –10V
Min Typ Max Unit
–25 –
–
V
– – –10 nA
– – –10 µA
– – ±10 pA
–1 – –5
V
– – –1
V
–3 –
–
mA