NTE456 Datasheet, PDF (2/2 Pages) NTE Electronics – N-Channel Silicon JFET General Purpose Amp, Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
|y_fs| V_DS = 15V, V_GS = 0, f = 1kHz, Note 1 2000 –
Output Admittance Common Source
Input Capacitance
Reverse Transfer Capacitance
Common–Source Output
Capacitance
|y_os|
C_iss
C_rss
C_osp
V_DS = 15V, V_GS = 0, f = 1kHz
V_DS = 15V, V_GS = 0, f = 1kHz
V_DS = 15V, V_GS = 0, f = 1kHz
V_DS = 15V, V_GS = 0, f = 30MHz
–
–
– 4.5
– 1.2
– 1.5
Functional Characteristics
Noise Figure
NF V_DS = 15V, V_GS = 0, R_S = 1MΩ, f =
100Hz
–
–
Max Unit
5000 µmhos
20 µmhos
6.0 pF
2.0 pF
–
pF
2.5 dB
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
Drain
Source
Gate
45°
Case
.040 (1.02)