NTE456 Datasheet, PDF (1/2 Pages) NTE Electronics – N-Channel Silicon JFET General Purpose Amp, Switch

NTE456
N–Channel Silicon JFET
General Purpose Amp, Switch
Description:
The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed
for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltge, V_DG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Drain Current, I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +200°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Gate–Source Breakdown Voltage V_(BR)GSS V_DS = 0, I_G = –10µA
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
I_GSS
V_GS(off)
V_GS
V_GS= –15V, V_DS = 0
V_GS= –15V, V_DS = 0, T_A = +150°C
V_DS = 15V, I_D = 0.1nA
V_DS = 15V, I_D = 200µA
ON Characteristics
Zero–Gate–Voltage Drain Current
Static Drain–Source On Resistance
I_DSS
r_DS(on)
V_DS = 15V, V_GS = 0
V_DS = 0, V_GS = 0
Min Typ Max Unit
–30 –
–
V
–
– –0.1 nA
–
– –100 nA
–
– –6
V
–1.0 – –5.0 V
2.0 – 6.0 mA
– 400 –
Ω