NTE395 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor Wide Band Linear Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Power Gain
Wide Band Power Gain
Noise Figure
V_CE = 15V, I_C = 10mA, f = 800MHz – 10 – dB
G_P f = 40 to 860MHz, R_S = R_L = 75Ω
–
16
– dB
NF V_CE = 15V, I_C = 3mA, f = 200MHz
– 2.5 –
dB
V_CE = 15V, I_C = 10mA, f = 800MHz – 3.5 – dB
V_CE = 15V, I_C = 10mA, f = 200MHz – 3.0 – dB
V_CE = 15V, I_C = 10mA, f = 800MHz – 4.0 – dB
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia Max
.185 (4.7) Dia Max
.030 (.762) Max
.018 (0.45)
B
E
C
45°
.040 (1.02)
Case