NTE395 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor Wide Band Linear Amplifier

NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (T_A = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Power Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Base Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Static Forward Current Transfer Ratio
Base–Emitter Voltage
Knee Voltage
Transition Frequency
Maximum Oscillation Frequency
Output Capacitance
I_CBO V_CB = 15V, I_E = 0
V_(BR)CBO I_C = 100µA, I_E = 0
V_(BR)CEO I_C = 5mA, I_B = 0
V_(BR)EBO I_E = 10µA, I_C = 0
h_21E V_CE = 10V, I_C = 10mA, Note 1
V_BE V_CE = 10V, I_C = 10mA
V_CEK I_C = 20mA, Note 2
f_T
V_CE = 15V, I_C = 10mA
f
V_CE = 15V, I_C = 10mA
C_22b V_CB = 15V, I_E = 0, f = 1MHz
Min Typ Max Unit
–
– 50 nA
30 –
–
V
25 –
–
V
3
–
–
V
20 –
–
– 0.75 –
V
– 0.8 –
V
1.4 2.3 – GHz
– 6.5 – GHz
– 1.1 – pF
Note 1. Pulsed.
Note 2. V_CEK tested with I_C = 100ma and I_B = values for which I_C = 110mA at V_CE = 1V.