NTE368 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
h_FE V_CE = 5V, I_C = 6A
20 70 150
Output Capacitance
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
– 130 150 pF
Functional Test
Common–Emitter Amplifier Power Gain
Input Power
Collector Efficiency
G_PE P_OUT = 60W, V_CC = 12.5V, f = 470MHz 4.4 5.0 – dB
P_in
– 19 22 W
η
55 60 – %
Output Mismatch Stress
ψ
V_CC = 16V, P_in = 26W, f = 470MHz,
VSWR = 20:1, All Phase Angles
No Degradation in
Output Power
Note 1. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.405
(10.3)
Min
E
B
.215 (5.48)
.122 (3.1) Dia
.500 (12.7) Dia
.005 (0.15)
C
E
.155 (3.94)
.160 (4.06)
.725 (18.43)
.975 (24.78)
.270
(6.85)