NTE368 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 60W @ 512MHz

NTE368
Silicon NPN Transistor
RF Power Output
P_O = 60W @ 512MHz
Description:
The NTE368 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 60 Watts
Minimum Gain = 4.4dB
Efficiency = 55%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16–volt High Line
and Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current–Continuous, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO
V_(BR)CES
V_(BR)EBO
I_CES
I_C = 50mA, I_B = 0
I_C = 50mA, V_BE = 0
I_E = 5mA, I_C = 0
V_CE = 15V, V_BE = 0, T_C = +25°C
16 – – V
36 – – V
4––V
– – 15 mA