NTE367 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
h_FE I_C = 4A, V_CE = 5V
20
70 150
Output Capacitance
Functional Tests
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
–
90 125 pF
Common–Emitter Amplifier Power Gain
Collector Efficiency
G_pe V_CC = 12.5V, P_O = 45W,
η
I_C(Max) = 5.8A, f = 470MHz
4.8 5.4
55
60
– dB
–%
Input Power
P_in V_CC = 12.5V, P_O = 45W,
f = 470MHz
–
13 15 W
Load Mismatch Stress
y
V_CC = 16V, f = 470MHz,
No Degradation in
VSWR = 20:1, All Phase Angles,
Output Power
Note 1, Note 2
Series Equivalent Input Impedance
Series Equivalent Output Impedance
Z_in V_CC = 12.5V, P_O = 45W,
Z_OL ^{f = 470MHz}
– 1.4+j4.0 –
Ω
– 1.2+j2.8 –
Ω
Note 1. P_in = 150% of Drive Requirement for 45W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.405
(10.3)
Min
E
B
.215 (5.48)
.122 (3.1) Dia
.500 (12.7) Dia
.005 (0.15)
C
E
.155 (3.94)
.160 (4.06)
.725 (18.43)
.975 (24.78)
.270
(6.85)