NTE367 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz

NTE367
Silicon NPN Transistor
RF Power Amplifier
P_O = 45W @ 512MHz
Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF
large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and
50% Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Case, R_ΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 20mA, I_B = 0
16
–
–
V
V_(BR)CES I_C = 20mA, V_BE= 0
36
–
–
V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 5mA, I_C – 0
4
–
–
V
Collector Cutoff Current
I_CES V_CE = 15V, V_BE = 0, T_C = +25°C –
–
10 mA