NTE366 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
h_FE V_CE = 5V, I_C = 4A
40 70 100
Output Capacitance
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
– 90 125 pF
Functional Test
Common–Emitter Amplifier Power Gain
Input Power
Collector Efficiency
G_PE P_OUT = 25W, V_CC = 12.5V,
I_Cmax = 3.6A, f = 470MHz
6.2 7.0 – dB
P_in P_OUT = 25W, V_CC = 12.5V, f = 470MHz – 5 6 W
η
55 60 – %
Output Mismatch Stress
ψ
V_CC = 16V, P_in = Note 1, f = 470MHz,
No Degradation in
VSWR = 20:1, All Phase Angles
Output Power
Series Equivalent Input Impedance
Z_in
P_OUT = 25W, V_CC = 12.5V, f = 470MHz
–1.2 + j3.3 –
Ω
Series Equivalent Output Impedance
Z_OL
–1.9 + j2.1 –
Ω
Note 1. P_in = 150% of Drive Requirement for 25W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.205 (5.18)
.405
(10.3)
Min
E
B
.215 (5.48)
.122 (3.1) Dia
.500 (12.7) Dia
.005 (0.15)
C
E
.155 (3.94)
.160 (4.06)
.725 (18.43)
.975 (24.78)
.270
(6.85)