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NTE366 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz | |||
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NTE366
Silicon NPN Transistor
RF Power Output
PO = 25W @ 512MHz
Description:
The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF largeâsignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristic:
Output Power = 25 Watts
Minimum Gain = 6.2dB
Efficiency = 60%
D Characterized with Series Equivalent LargeâSignal Impedance Parameters
D BuiltâIn Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16âvolt High Line
and Overdrive
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector CurrentâContinuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +150°C
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorâEmitter Breakdown Voltage
EmitterâBase Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
IC = 20mA, IB = 0
IC = 20mA, VBE = 0
IE = 5mA, IC = 0
VCE = 15V, VBE = 0, TC = +25°C
16 â â V
36 â â V
4ââV
â â 10 mA
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