NTE361 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
h_FE V_CE = 5V, I_C = 100mA
20 – 200
Output Capacitance
C_ob V_CB = 12.5V, I_E = 0, f = 1MHz
– – 15 pF
Functional Test
Common–Emitter Amplifier Power Gain
Collector Efficiency
G_PE P_OUT = 2W, V_CC = 12.5V, f = 470MHz 8.0 –
η
P_OUT = 2W, V_CC = 12.5V, f = 470MHz 50 –
– dB
–%
.260 (6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500 (12.7)
Min
Collector
45°
.018 (0.45) Dia
Base
Emitter/Case
.031 (.793)