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NTE361 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz | |||
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NTE361
Silicon NPN Transistor
RF Power Output
PO = 2W @ 512MHz
Description:
The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF largeâsignal amplifier applications
in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5 Volt, 470MHz Characteristics:
Output Power = 2.0 Watts
Minimum Gain = 8.0dB
Efficiency = 50%
D Characterized with Series Equivalent LargeâSignal Impedance Parameters
D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation
D Replaces MediumâPower Stud Mounted Devices
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector CurrentâContinuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation @ TC = 25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâEmitter Breakdown Voltage
EmitterâBase Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
IC = 50mA, IB = 0
IC = 50mA, VBE = 0
IE = 1mA, IC = 0
VCB = 15V, IE = 0
Min Typ Max Unit
16 â â V
36 â â V
4ââV
â â 1.0 mA
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