NTE360 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Functional Test
Common−Emitter Amplifier Power Gain
Collector Efficiency
G_PE P_OUT = 40 W, V_CE = 28 V, f = 175MHz
η
P_OUT = 40 W, V_CE = 28 V, f = 175MHz
7.6 8.1 − dB
60 − − %
1.040 (26.4) Max
.520
(13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385
(9.8)
Dia
.005 (0.15)
8−32−NC−3A
Wrench Flat
.168 (4.27)
.750
(19.05)