NTE360 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Output PO = 40W @ 175MHz

NTE360
Silicon NPN Transistor
RF Power Output
P_O = 40W @ 175MHz
Description:
The NTE360 is designed primarily for wideband large−signal amplifier stages in the 125−175MHz
frequency range.
Features:
• Specified 28 Volt, 175MHz Characteristics:
Output Power = 40 Watts
Minimum Gain = 7.6dB
Efficiency = 60%
• Characterized from 125 to 175MHz
• Includes Series Equivalent Impedances
Absolute Maximum Ratings:
Collector−Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Collector−Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter−Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 342mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage
V_(BR)CEO I_C = 200mA, I_B = 0, Note 1
V_(BR)CES I_C = 200mA, V_BE = 0, Note 1
Emitter−Base Breakdown Voltage
V_(BR)EBO I_E = 10mA, I_C = 0
Collector Cutoff Current
On Characteristics
I_CBO V_CB = 30V, I_E = 0
DC Current Gain
Dynamic Characteristics
h_FE I_{C =} 500mA, V_CE = 5.0V
Output Capacitance
C_ob
Note 1 Pulsed through 25mH inductor.
V_CB = 30V, I_E = 0, f = 0.1 to 1.0MHz
Min Typ Max Unit
35 −
65 −
4−
−−
−V
−V
−V
1 mA
5.0 − − −
− 45 65 pF