NTE36 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors AF Power Amplifier, High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 5mA, I_E = 0
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 5mA, R_BE = ∞
I_C = 50mA, R_BE = ∞
Emitter–Base Breakdown Voltage V_(BR)EBO I_E = 5mA, I_C = 0
Turn–On Time
NTE36
NTE37
t_on
10I_B1 = –10I_B2 = I_C = 1A,
PW = 20µs
160 –
–
V
140 –
–
V
140 –
–
V
6
–
–
V
µs
– 0.26 –
– 0.25 –
Fall Time
t_f
NTE36
NTE37
µs
– 0.68 –
– 0.53 –
Storage Time
t_on
NTE36
NTE37
µs
– 6.88 –
– 1.61 –
Note 1. Matched complementary pairs are available upon request (NTE37MCP). Matched comple-
mentary pairs have their gain specification (h_FE) matched to within 10% of each other.
.190 (4.82)
.787
(20.0)
.615 (15.62)
.591
(15.02)
OR .217
(5.5)
(Note)
.126
(3.22)
Dia
.670 (17.0)
Max
.197 (5.0)
.866
(22.0)
.130 (3.3)
Dia
BC E
.590
(15.0)
.177 (4.5)
.787
(20.0)
B CE
.747
(19.0)
Min
.215 (5.47)
.215 (5.47) .025 (0.65)
NOTE: Either case style may be shipped depending on stock.