NTE36 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors AF Power Amplifier, High Current Switch

NTE36 (NPN) & NTE37 (PNP)
Silicon Complementary Transistors
AF Power Amplifier, High Current Switch
Description:
The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case de-
signed for AF power amplifier and high current switching applications.
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
NTE36
NTE37
I_CEO
I_EBO
h_FE1
h_FE2
f_T
C_ob
V_CB = 80V, I_E = 0
V_BE = 4V, I_C = 0
V_CE = 5V, I_C = 1A
V_CE = 5V, I_C = 6A
V_CE = 5V, I_C = 1A
V_CB = 10V, f = 1MHz
–
– 0.1
–
– 0.1
60 – 200
20 –
–
– 15 –
– 210 –
– 300 –
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
NTE36
NTE37
V_BE
V_CE(sat)
V_CE = 5V, I_C = 1A
I_C = 5A, I_B = 500mA
–
– 1.5
– 0.6 2.5
– 1.1 –
Unit
mA
mA
MHz
pF
V
V