NTE346 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Transistor

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
Collector–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
I_C = 100mA, V_CE = 5V
I_C = 360mA, V_CE = 5V
I_C = 100mA, I_B = 20mA
10 – 200
5––
– – 0.5 V
Current–Gain Bandwidth Product
Output Capacitance
Functional Test
f_T
I_C = 50mA, V_CE = 15V, f = 1MHz
C_ob V_CB = 12V, I_E = 0, f = 1MHz
500 –
––
– MHz
4 pF
Power Input
Collector Efficiency
P_in P_out = 1W, Z_S = 50Ω, V_CC = 12V,
η
f = 175MHz
– – 100 W
50 – – %
Common–Emitter Amplifier Power Gain
G_pe P_in = 100mW, Z_S = 50Ω, V_CC = 12V, 10 –
f = 175MHz
– dB
.260 (6.6)
Max
.500 (12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.018 (0.45) Dia
B
E
C/Case
45°
.031 (.793)