NTE346 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Transistor

NTE346
Silicon NPN Transistor
RF Power Transistor
Description:
The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency mul-
tiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver
or pre–driver stages, in VHF and UHF equipment.
Features:
D Current–Gain–Bandwidth Product–f_T = 500MHz (Min) @ I_C = 50mAdc
D Power Gain–G_pe = 10dB (Min) @ V_CE =12Vdc
D 1 Watt Minimum Power Output @ f = 175MHz
D Multiple–Emitter Construction for Excellent High–Frequency Performance
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Collector Current–Continuous, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Base Current–Continuous. I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/°C
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5Wa
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V_CEO(sus) I_C = 5mA, I_B = 0
V_CER(sus) I_C = 5mA, R_BE = 10Ω
20 – – V
40 – – V
Collector Cutoff Current
I_CEO V_CE = 12V, I_B = 0
–
I_CEV V_CE = 40V, V_BE = –1.5V
–
V_CE = 12V, V_BE = –1.5V, T_C = +150°C –
– 0.02 mA
– 0.1 mA
– 5.0 mA
Emitter Cutoff Current
I_EBO V_EB = 2V, I_C = 0
– – 0.1 mA