NTE337 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, Driver

Parameter
Symbol
Test Conditions
Functional Tests (V_CC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
G_PE P_out = 8W, f = 50MHz
Power Output
Collector Efficiency
P_out P_in = 800mW, f = 50MHz
h
P_out = 8W, f = 50MHz
1.040 (26.4) Max
.520 (13.2)
C
Min Typ Max Unit
10
–
8
–
50
–
– dB
–
W
–
%
.230
(5.84)
E
E
.100 (2.54)
B
.385 (9.8)
Dia
.005 (0.15)
8–32–NC–3A
Wrench Flat
.168 (4.27)
.750
(19.05)