NTE337 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor RF Power Amp, Driver

NTE337
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large–
signal amplifier driver and pre–driver stages. This device is intended for use in industrial communica-
tions equipment operating at frequencies to 80MHz.
Features:
D Specified 12.5V, 50MHz Characteristics:
Output Power = 8W
Minimum Gain = 10dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 200mA, I_B = 0, Note 1
18 –
–V
V_(BR)CES I_C = 50mA, V_BE = 0, Note 1
36 –
–V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 5mA, I_C = 0
4
–
–V
Collector Cutoff Current
I_CES V_CE = 15V, V_BE = 0, T_C = +125°C
–
– 10 mA
I_CBO V_CB = 15V, I_E = 0
–
–
1 mA
ON Characteristics
DC Current Gain
h_FE I_C = 500mA, V_CE = 5V
5
–
–
Note 1. Pulsed through a 25mH inductor.
Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Dynamic Characteristics
Output Capacitance
C_ob V_CB = 15V, I_E = 0, f = 0.1 to 1MHz
–
–
Max Unit
90 pF