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NTE3323 Datasheet, PDF (2/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
C
G
E
.236
(6.0)
.810(20.57)
Max
.137 (3.5)
Dia Max
.204 (5.2)
1.030
(26.16)
.098
(2.5)
.787
(20.0)
.215 (5.45)
.040 (1.0)
.023
(0.6)
GCE
Note: Collector connected to heat sink.