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NTE3323 Datasheet, PDF (1/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | |||
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NTE3323
Insulated Gate Bipolar Transistor
NâChannel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
CollectorâEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
GateâEmitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
IGES
ICES
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
CollectorâEmitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0
GateâEmitter Cutoff Voltage
VGE(off) IC = 25mA, VCE = 5V
CollectorâEmitter Saturation Voltage
Input Capacitance
Rise Time
TurnâOn Time
VCE(sat)
Cies
tr
ton
IC = 25A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
VCC = 600V
Fall Time
tf
TurnâOff Time
toff
Min Typ Max Unit
â
â ±500 nA
â
â 1.0 mA
1200 â
â
V
3.0 â 6.0 V
â 3.0 4.0 V
â 3200 â pF
â 0.30 0.60 µs
â 0.40 0.80 µs
â 0.25 0.50 µs
â 0.80 1.50 µs
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