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NTE3311 Datasheet, PDF (2/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
C
G
E
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G C/
Case
E
.215 (5.47)