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NTE3311 Datasheet, PDF (1/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3311
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
IGES
ICES
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
Collector–Emitter Breakdown Voltage V(BR)CES IC = 2mA, VGE = 0
Gate–Emitter Cutoff Voltage
VGE(off) IC = 25mA, VCE = 5V
Collector–Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn–On Time
VCE(sat)
Cies
tr
ton
IC = 25A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V
Fall Time
tf
Turn–Off Time
toff
Min Typ Max Unit
–
– ±500 nA
–
– 1.0 mA
600 –
–
V
3.0 – 6.0 V
– 3.0 4.0 V
– 1400 – pF
– 0.30 0.60 µs
– 0.40 0.80 µs
– 0.15 0.35 µs
– 0.50 1.00 µs
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