NTE331 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Amp, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base–Emitter Saturation Voltage
Base–Emitter Voltage
DC Current Gain
V_BE(sat)
V_BE
h_FE
I_C = 10A, I_B = 2.5A, Note 1
I_C = 5A, V_CE = 4V, Note 1
I_C = 0.5A, V_CE = 4V, Note 1
I_C = 5A, V_CE = 4V, Note 1
I_C = 10A, V_CE = 4V, Note 1
– – 2.5 V
– – 1.5 V
40 – 250
15 – 150
5––
Transistion Frequency
f_T
I_C = 0.5A, V_CE = 4V
3 – – MHz
Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab