NTE331 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Amp, Switch

NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (I_E = 0), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Emitter Current, I_E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (T_C ≤ +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Max
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Voltage
I_CBO I_E = 0, V_CB = 100V
– – 500 µA
I_E = 0, V_CB = 100V, T_C = +150°C –
–
5 mA
I_CEO I_B = 0, V_CE = 50V
– – 1 mA
I_EBO I_C = 0, V_EB = 5V
– – 1 mA
V_CEO(sus) I_B = 0, I_C = 100mA, Note 1
100 – – V
Collector–Emitter Saturation
Voltage
V_CE(sat) I_C = 5A, I_B = 0.5A, Note 1
I_C = 10A, I_B = 2.5A, Note 1
––1V
––3V