NTE3300 Datasheet, PDF(2/2 Page) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

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NTE3300 Datasheet, PDF (2/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

◁

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

GC E

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated