NTE3300 Datasheet, PDF (1/2 Pages) NTE Electronics – Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch

NTE3300
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D Low Saturation Voltage
D Enhancement Mode
D 20V Gate Drive
Applications:
D High Power Switching
D Motor Control
Absolute Maximum Raings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate–Emitter Voltage, V_GES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±25V
Collector Current, I_C
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130A
Collector Power Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.16°C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6N•m
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Gate Leakage Current
Collector Cutoff Current
I_GES
I_CES
V_GE = ±25V, V_CE = 0
V_CE = 400V, V_GE = 0
Collector–Emitter Breakdown Voltage V_(BR)CES I_C = 2mA, V_GE = 0
Gate–Emitter Cutoff Voltage
V_GE(off) I_C = 1mA, V_CE = 5V
Collector–Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn–On Time
V_CE(sat)
C_ies
t_r
t_on
I_C = 130A, V_GE = 20V (Pulsed)
V_CE = 10V, V_GE = 0, f = 1MHz
V_CC = 300V
Fall Time
t_f
Turn–Off Time
t_off
Min Typ Max Unit
–
– ±100 nA
–
– 1.0 µA
400 –
–
V
4.0 5.0 7.0 V
– 5.0 8.0 V
– 1350 – pF
– 0.1 0.5 µs
– 0.15 0.50 µs
– 4.0 6.0 µs
– 4.5 7.0 µs