NTE323 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base–Emitter Voltage
DC Current Gain
Transition Frequency
Collector–Base Capacitance
Small–Signal Current Gain
V_BE
h_FE
f_T
C_cbo
h_fe
V_CE = 2V, I_C = 250mA
V_CE = 2V, I_C = 250mA, Note 1
V_CE = 2V, I_C = 1A, Note 1
V_CE = 10V, I_C = 100mA, f = 10MHz
V_CB = 20V, I_E = 0, f = 1MHz
V_CE = 1.5V, I_C = 200mA, f = 1kHz
–
– 1.0 V
40 – 150 –
5
–
–
–
30 –
– MHz
–
– 50 pF
40 –
–
–
Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.
.260
(6.6)
Max
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.500
(12.7)
Min
Emitter
.018 (0.45)
Base
Collector/Case
45°
.031 (.793)