NTE323 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose

NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (I_E = 0), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation, P_tot
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
I_CBO
I_CEO
I_CEV
I_EBO
V_CEO(sus)
V_CE(sat)
V_CB = 120V, I_E = 0
V_CE = 80V, I_B = 0
V_CE = 120V, V_BE = –1.5V
V_CE = 120V, V_BE = –1.5V, T_C = +150°C
V_EB = 4V, I_C = 0
I_C = 10mA, I_B = 0, Note 1
I_C = 250mA, I_B = 25mA, Note 1
I_C = 500mA, I_B = 50mA, Note 1
I_C = 1A, I_B = 200mA, Note 1
Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
–
–
1 µA
–
– 10 µA
–
–
1 µA
–
–
1 mA
–
–
1 µA
120 –
–
V
–
– 0.6 V
–
– 1.0 V
–
– 2.0 V