NTE3028 Datasheet, PDF (2/2 Pages) NTE Electronics – Infrared Emitting Diode PN Gallium Arsenide

Optical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Total Output Power
Radiant Intensity
P_O I_F = 60mA, Note 2
I_F = 100mA, Note 2, Note 3
I_O I_F = 100mA, Note 3, Note 4
Peak Emission Wavelength
λP
Spectral Line Half Width
∆λ
Min Typ Max Unit
– 2.5 –
mW
1.0 4.0 –
mW
– 1.5 –
mW/
steradian
– 940 –
nm
– 40 –
nm
Note 2. Power Output, P_O, is the total power radiated by th device into a solid angle of 2π steradians.
It is measured by directing all radiation leaving the device, within this solid angle, onto a cali-
brated silicon solar cell.
Note 3. PW = 100µs, Duty Cycle = 2%.
Note 4. Irradiance from a Light Emitting Diode (LED) can be calculated by:
H=
I_e
d²
where
H is irradiance in mW/cm²
Id_e2isisrdaidsitaanntcientferonmsityLEinDmtoWt/hsetedraedteiacntor _{in cm}
.030 (.762)
Seating Plane
Anode
.040 (1.02)
.186 (4.72) Dia
.145 (3.68) Dia
.195
(4.95)
Cathode
.500
(12.7)
Min
.018 (0.45) Dia Typ
.220 (5.59) Dia
.100 (2.54)