NTE3028 Datasheet, PDF (1/2 Pages) NTE Electronics – Infrared Emitting Diode PN Gallium Arsenide

NTE3028
Infrared Emitting Diode
PN Gallium Arsenide
Description:
The NTE3028 is designed for applications requiring high power output, low drive power, and very fast
response time. This device is used in industrial processing and control, light modulators, shaft or posi-
tion encoders, punched card readers, optical switching, and logic circuits. It is spectrally matched for
use with silicon detectors.
Features:
D High Power Output
D Infrared Emission
D Low Drive Current
D Popular TO18 Type Package for Easy Handling and Mounting
Absolute Maximum Ratings:
Reverse Voltage, V_R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, I_F
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (PW = 100µs, Duty Cycle = 2%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.27mW/°C
Operating Temperature Range, T_A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1. Printed circuit board mounting.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Reverse Leakage Current
Reverse Breakdown Voltage
Forward Voltage
Total Capacitance
I_R
V_(BR)R
V_F
C_T
V_R = 3V
I_R = 100µA
I_F = 50mA
V_R = 0V, f = 1MHz
Min Typ Max Unit
–
2
– nA
6 20 –
V
– 1.32 1.5 V
– 18 – pF