NTE2996 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain−Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250µA
Breakdown Voltage Temperature
Coefficient
∆V_(BR)DSS/ Reference to +25°C, I_D = 1mA
∆T_J
Static Drain−Source ON Resistance R_DS(on) V_GS = 10V, I_D = 50A, Note 5
Gate Threshold Voltage
V_GS(th) V_DS = V_GS, I_D = 250µA
Forward Transconductance
g_fs
V_DS = 25V, I_D = 50A, Note 5
Drain−to−Source Leakage Current
I_DSS V_DS = 60V, V_GS = 0
V_DS = 48V, V_GS = 0V, T_C = +150°C
Gate−Source Leakage, Forward
I_GSS V_GS = 20V
Gate−Source Leakage, Reverse
V_GS = −20V
Total Gate Charge
Q_g
V_GS = 10V, I_D = 50A, V_DS = 48V
Gate−Source Charge
Q_gs
Gate−Drain (“Miller”) Charge
Q_gd
Turn−On Delay Time
Rise Time
t_d(on)
t_r
V_DD = 30V_, I_D = 50A, R_G = 3.6Ω,
V_GS = 10V, Note 5
Turn−Off Delay Time
t_d(off)
Fall Time
t_f
Internal Drain Inductance
Internal Source Inductance
L_D
Between lead, 6mm (0.25”) from
L_S
package and center of die contact
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Source−Drain Diode Ratings and Characteristics
60 − − V
− 0.064 − V/°C
− − 12 Ω
2.0 − 4.0 V
69 − − mhos
− − 25 µA
− − 250 µA
− − 100 nA
− − −100 nA
− − 130 nC
− − 28 nC
− − 44 nC
− 12 − ns
− 78 − ns
− 48 − ns
− 53 − ns
− 4.5 − nH
− 7.5 − nH
− 3210 − pF
− 690 − pF
− 140 − pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn−On Time
I_S
(Body Diode) Note 6
− − 84 A
I_SM (Body Diode) Note 2
− − 330 A
V_SD T_J = +25°C, I_S = 50A, V_GS = 0V, Note 5 −
− 1.3 V
t_rr
T_J = +25°C, I_F = 50A, di/dt = 100A/µs, − 73 110 ns
Q_rr
Note 5
− 220 330 µC
t_on
Intrinsic turn−on time is neglegible
(turn−on is dominated by L_S + L_D)
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Width ≤ 400µs, Duty Cycle ≤ 2%.
Note 6. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.