NTE2996 Datasheet, PDF (1/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2996
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
Features:
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
Absolute Maximum Ratings:
Drain Current, I_D
Continuous (V_GS = 10V)
T_C = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4W/°C
Gate−Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Single Pulsed Avalanche Energy (I_AS = 50A, L = 260µH, Note 3), E_AS . . . . . . . . . . . . . . . . . 320mJ
Avalanche Current (Note 2), I_AR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Repetitive Avalanche Energy (Note 2), E_AR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T_L . . . . . . . . . . +300°C
Maximum Thermal Resistance:
Junction−to−Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75°C/W
Junction−to−Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W
Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), R_thCS . . . . . . . . . . . . 0.50°C/W
Note 1. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. This is a calculated value limited to T_J = +175°C.
Note 4. I_SD ≤ 50A, di/dt ≤ 230A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ +175°C.