NTE2987 Datasheet, PDF (2/3 Pages) NTE Electronics – Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF
Drain–Source Breakdown Voltage
Drain–to–Source Leakage Current
Gate–Source Leakage Forward
Gate–Source Leakage Reverse
ON (Note 5)
BV_DSS
I_DSS
I_GSS
I_GSS
V_GS = 0v, I_D = 250µA
V_DS = 100V, V_GS = 0
V_DS = 80V, V_GS = 0V, , T_C = +150°C
V_GS = 15V
V_GS = –15V
Gate Threshold Voltage
Static Drain–Source ON Resistance
On–State Drain Current
Dynamic
V_GS(th)
R_DS(on)
I_D(on)
V_DS = V_GS, I_D = 250µA
V_GS = 5V, I_D = 10A
V_DS > I_D(on) x R_DS(on)max, V_GS = 10V
Forward Transconductance
g_fs
V_DS > I_D(on) x R_DS(on)max, I_D = 10A,
Note 5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
Total Gate Charge
Q_g
V_GS = 5V, I_D = 20A, V_DD = 80V
Gate–Source Charge
Q_gs
Gate–Drain (“Miller”) Charge
Q_gd
Turn–On Delay Time
Rise Time
t_d(on)
t_r
V_DD = 30V_, I_D = 10A, R_G = 50Ω,
V_GS = 5V
Turn–Off Delay Time
Fall Time
t_d(off)
t_f
V_DD = 80V_, I_D = 20A, R_G = 50Ω,
V_GS = 5V
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_S
I_SM
V_SD
t_rr
Q_rr
I_RRM
(Body Diode)
(Body Diode) Note 1
I_SD = 20A, V_GS = 0V, Note 5
T_J = +150°C, V_DD = 50V, I_SD = 20A,
di/dt = 100A/µs
Note 1. Pulse width limited by safe operating area.
Note 5. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Min Typ Max Unit
100 –
–
V
––
1 µA
– – 10 µA
– – 100 nA
– – –100 nA
1.0 1.6 2.5 V
– 0.09 0.12 Ω
20 – – A
10 16 – mhos
– 1200 1500 pF
– 250 350 pF
– 60 90 pF
– 22 30 nC
– 6 – nC
– 12 – nC
– 50 70 ns
– 140 200 ns
– 80 110 ns
– 80 110 ns
– – 20 A
– – 80 A
– – 1.5 V
– 130 – ns
– 0.4 – µC
–6 – A