NTE2987 Datasheet, PDF (1/3 Pages) NTE Electronics – Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2987
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Logic Level Gate Drive
D R_DS(on) = 0.09Ω Typ. at V_GS = 5V
D +175°C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability
Absolute Maximum Ratings:
Drain Current, I_D
Continuous
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W/°C
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Avalanche Current, Repetitive or Non–Repetitive (Note 2), I_AR . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Single Pulsed Avalanche Energy (Note 3), E_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mJ
Repetitive Avalanche Energy (Note 2), E_AR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mJ
Avalanche Current, Repetitive or Non–Repetitive (Note 4), I_AR . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Drain–Source Voltage (V_GS = 0), V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Drain–Gate Voltage (R_GS = 20kΩ), V_DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T_L . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43°C/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R_thCS . . . . . . 0.5°C/W
Maximum Junction–to–Ambient (Free Air Operation), R_thJA . . . . . . . . . . . . . . . . . . . 62.5°C/W
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T_J max, Duty Cycle < 1%.
Note 3. V_DD = 25V, I_D = I_AR, Starting T_J = +175°C.
Note 4. T_C = +100°C, Pulse width limited by T_J max, Duty Cycle < 1%.