NTE2974 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_G
Q_GS
Q_GD
V_F(S–D)
t_rr
Q_rr
V_DS = 10V, V_GS = 0, f = 1MHz
V_GS = 10V, V_DD = 150V, I_D = 3A,
R_G = 10Ω, R_L = 37.5Ω
V_GS = 10V, I_D = 6A, V_DD = 480V
I_F = 6A, V_GS = 0
I_F = 6A, di/dt = 50A/µs
– 1150 – pF
– 260 – pF
– 60 – pF
– 15 – ns
– 15 – ns
– 75 – ns
– 13 – ns
– 40 – nC
–
6
– nC
– 20 – nC
– 1.0 –
V
– 370 – ns
– 1.5 – µC
.147 (3.75)
Dia Max
.420 (10.67)
Max
Isol
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain