NTE2974 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2974
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low On–State Resistance: R_DS(on) = 1.1Ω Max (V_GS = 10V, I_D = 3A)
D Low Input Capacitance: C_iss = 1150pF Typ
D High Avalanche Capability Ratings
D Isolated TO220 Type Package
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–to–Source Voltage, V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate–to–Source Voltage, V_GSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, I_D
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6.0A
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±24A
Total Power Dissipation, P_T
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
Single Avalanche Current (Note 2), I_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A
Single Avalanche Energy (Note 2), E_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mJ
Channel Temperature, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. PW ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Starting T_ch = +25°C, R_G = 25Ω, V_GS = 20V → 0.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–to–Source On–State Resistance
Gate–to–Source Cutoff Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate–to–Source Leakage Current
R_DS(on)
V_GS(off)
|y_fs|
I_DSS
I_GSS
V_GS = 10V, I_D = 3A
V_DS = 10V, I_D = 1mA
V_DS = 10V, I_D = 3A
V_DS = 600V, V_GS = 0
V_GS = ±30V, V_DS = 0
Min Typ Max Unit
– 0.8 1.1 Ω
2.5 – 3.5 V
2.0 –
–
S
–
– 100 µA
–
– ±100 nA