NTE2970 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics (Cont’d): (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
– 2800 – pF
– 350 – pF
– 55 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
t_d(on)
t_r
t_d(off)
t_f
V_SD
V_DD = 200V_, I_D = 11A, V_GS = 10V,
R_GEN = R_GS = 50Ω
I_S = 11A, V_GS = 0V
– 60 – ns
– 80 – ns
– 270 – ns
– 80 – ns
– 1.5 2.0 V
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G
DS
.215 (5.47)