NTE2970 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2970
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D SMPS
D DC–DC Converter
D Battery Charger
D Power Supply of Printer
D Copier
D HDD, FDD, TV, VCR
D Personal Computer
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Drain–Source Voltage (V_GS = 0V), V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage (V_DS = 0V), V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Drain Current, I_D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66A
Maximum Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275W
Channel Temperature Range, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R_{th(ch–c)} . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Electrical Characteristics: (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Breakdown Voltage
Gate–Source Leakage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(th)
R_DS(on)
V_DS(on)
|y_fs|
V_DS = 0V, I_D = 1mA
V_DS = 0V, I_G = ±100µA
V_GS = ±25V, V_DS = 0V
V_DS = 500V, V_GS = 0
V_DS = 10V, I_D = 1mA
V_GS = 10V, I_D = 11A
V_GS = 10V, I_D = 11A
V_GS = 10V, I_D = 11A
Min Typ Max Unit
500 –
–
V
±30 –
–
V
– – ±10 µA
– – 1.0 mA
2.0 3.0 4.0 V
– 0.22 0.29 Ω
– 2.4 3.2 V
7 10 –
S