NTE2969 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage BV_DSS V_GS = 0V, I_D = 250µA
Breakdown Voltage Temperature DBV/DT_J I_D = 250µA
Coefficient
Gate Threshold Voltage
V_GS(th) V_DS = 5V, I_D = 250µA
Gate–Source Leakage Forward
I_GSS V_GS = 30V
Gate–Source Leakage Reverse
I_GSS V_GS = –30V
Zero Gate Voltage Drain Current
I_DSS V_DS = 400V, V_GS = 0
V_DS = 320V, T_C = +150°C
Static Drain–Source ON Resistance R_DS(on) V_GS = 10V, I_D = 12.5A, Note 4
Forward Transconductance
g_fs V_DS = 50V, I_D = 12.5A, Note 4
Input Capacitance
C_iss V_GS = 0V, V_DS = 25V, f = 1MHz
Output Capacitance
C_oss
Reverse Transfer Capacitance
C_rss
Turn–On Delay Time
Rise Time
t_d(on)
t_r
V_DD = 200V_, I_D = 25A, R_G = 5.3Ω,
Note 4, Note 5
Turn–Off Delay Time
t_d(off)
Fall Time
t_f
Total Gate Charge
Gate–Source Charge
Q_g V_GS = 10V, I_D = 25A, V_DS = 320V,
Q_gs ^{Note 4, Note 5}
Gate–Drain (“Miller”) Charge
Q_gd
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I_S (Body Diode)
I_SM (Body Diode) Note 1
V_SD T_J = +25°C, I_S = 25A, V_GS = 0V, Note 4
t_rr T_J = +25°C, I_F = 25A, dI_F/dt = 100A/µs
Q_rr
Min Typ Max Unit
400 –
–
V
– 0.20 – V/°C
2.0 – 4.0 V
– – 100 nA
– – –100 nA
–
–
10 µA
–
– 100 µA
–
– 0.2 Ω
– 18.91 – mhos
– 3180 4130 pF
– 435 500 pF
– 200 240 pF
– 22 55 ns
– 22 60 ns
– 127 260 ns
– 38 85 ns
– 140 182 nC
– 21 – nC
– 64.8 – nC
– – 25 A
– – 100 A
– – 1.5 V
– 484 – ns
– 7.6 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.