NTE2967 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

Electrical Characteristics (Cont’d): (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capacitance
Output Capacitance
C_iss
C_oss
V_GS = 0V, V_DS = 10V, f = 1MHz
– 6540 – pF
– 1150 – pF
Reverse Transfer Capacitance
C_rss
– 500 – pF
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD = 50V_, I_D = 35A, V_GS = 10V,
R_GEN = R_GS = 50Ω
– 95 – ns
– 175 – ns
– 330 – ns
– 190 – ns
Diode Forward Voltage
Reverse Recovery Time
V_SD I_S = 35A, V_GS = 0V
t_rr
I_S = 70A, dI_F/dt = 100A/µs
– 1.0 1.5 V
– 120 – ns
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G
DS
.215 (5.47)