NTE2967 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2967
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
D Motor Control
D Lamp Control
D Solenoid Control
D DC–DC Converter
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Drain–Source Voltage (V_GS = 0V), V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Gate–Source Voltage (V_DS = 0V), V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, I_D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Avalanche Drain Current (Pulsed, L = 100µH), I_DA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Source Current, I_S
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280A
Maximum Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Channel Temperature Range, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, R_{th(ch–c)} . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83°C/W
Electrical Characteristics: (T_ch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage
Gate–Source Leakage
V_(BR)DSS V_DS = 0V, I_D = 1mA
I_GSS V_GS = ±20V, V_DS = 0V
Zero Gate Voltage Drain Current
I_DSS V_DS = 100V, V_GS = 0
Gate Threshold Voltage
V_GS(th) V_DS = 10V, I_D = 1mA
Static Drain–Source ON Resistance
Drain–Source On–State Voltage
Forward Transfer Admittance
R_DS(on)
V_DS(on)
|y_fs|
V_GS = 10V, I_D = 35A
V_GS = 10V, I_D = 35A
V_GS = 10V, I_D = 35A
Min Typ Max Unit
100 –
–
V
– – ±0.1 µA
– – 0.1 mA
2.0 3.0 4.0 V
– 14 20 mΩ
– 0.49 0.70 V
– 53 –
S