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NTE2945 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâSource Breakdown Voltage BVDSS VGS = 0v, ID = 250µA
450 â â V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 â 4.0 V
GateâSource Leakage Forward
IGSS VGS = 20V
â â 100 nA
GateâSource Leakage Reverse
IGSS VGS = â20V
â â â100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
â â 250 µA
VDS = 0.8 Max. Rating, TC = +125°C
â â 1000 µA
Static DrainâSource ON Resistance RDS(on) VGS = 10V, ID = 5A, Note 4
â â 0.55 â¦
Forward Transconductance
gfs VDS ⥠50V, ID = 5A, Note 4
5.8 8.7 â mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
â 1500 â pF
Output Capacitance
Coss
â 170 â pF
Reverse Transfer Capacitance
Crss
â 75 â pF
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
td(on) VDD = 0.5 BVDSS, ID = 10A, ZO = 9.1â¦,
â 14 21 ns
tr
(MOSFET switching times are essentially
independent of operating temperature)
â
27 41
ns
td(off)
â 50 75 ns
Fall Time
tf
â 24 36 ns
Total Gate Charge
(GateâSource Plus GateâDrain)
GateâSource Charge
GateâDrain (âMillerâ) Charge
Qg VGS = 10V, ID = 10A, VDS = 0.8 Max.
Qgs
Rating, (Gate charge is essentially
independent of operating temperature)
Qgd
â â 79 nC
â 1013 â nC
â 32.3 â nC
SourceâDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +25°C, IS = 10A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 10A, dIF/dt = 100A/µs
â â 10 A
â â 40 A
ââ2V
â 370 â ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
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