NTE2945 Datasheet, PDF (1/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2945
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain–Gate Voltage (R_GS = 1MΩ, Note 1), V_DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, I_D
Continuous
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Gate Current (Pulsed), I_GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 3), E_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157mJ
Avalanche Current, I_AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T_L . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12K/W
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R_thCS . . . . . . . 0.5K/W
Maximum Junction–to–Ambient (Free Air Operation), R_thJA . . . . . . . . . . . . . . . . . . . . 62.5K/W
Note 1. T_J = +25° to +150°C.
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 9.1mH, V_DD = 50V, R_G = 25Ω, Starting T_J = +25°C.