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NTE2942 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode High Speed Switch | |||
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainâSource Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
100 â â V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 â 4.0 V
GateâSource Leakage Forward
IGSS VGS = 20V
â â 100 nA
GateâSource Leakage Reverse
IGSS VGS = â20V
â â â100 nA
Zero Gate Voltage Drain Current
IDSS VDS = Max. Rating, VGS = 0
â â 250 µA
VDS = 0.8 Max. Rating, TC = +150°C
â â 1000 µA
Static DrainâSource ON Resistance RDS(on) VGS = 10V, ID = 7A, Note 4
â â 0.16 â¦
Forward Transconductance
gfs VDS ⥠50V, ID = 7A, Note 4
5.1 7.6 â mhos
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
â 640 â pF
Output Capacitance
Coss
â 240 â pF
Reverse Transfer Capacitance
Crss
â 72 â pF
TurnâOn Delay Time
Rise Time
TurnâOff Delay Time
td(on) VDD = 0.5 BVDSS, ID = 14A, ZO = 9.1â¦,
â 10 15 ns
tr
(MOSFET switching times are essentially
independent of operating temperature)
â
34 51
ns
td(off)
â 23 35 ns
Fall Time
tf
â 24 36 ns
Total Gate Charge
(GateâSource Plus GateâDrain)
GateâSource Charge
GateâDrain (âMillerâ) Charge
Qg VGS = 10V, ID = 14A, VDS = 0.8 Max.
â â 36 nC
Qgs
Rating, (Gate charge is essentially indepen-
dent of operating temperature)
â
7.1
â
nC
Qgd
â 14.6 â nC
SourceâDrain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
IS (Body Diode)
ISM (Body Diode) Note 2
VSD TJ = +25°C, IS = 14A, VGS = 0V, Note 4
trr TJ = +25°C, IF = 14A, dIF/dt = 100A/µs
â â 14 A
â â 56 A
â â 2.5 V
â 125 250 ns
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
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