NTE287 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage, General Purpose Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE287 & NTE288
h_FE
I_C = 1mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
25 – –
40 – –
NTE287
NTE288
I_C = 30mA, V_CE = 10V
40 – –
25 – –
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
V_CE(sat) I_C = 20mA, I_B = 2mA
V_BE(sat) I_C = 20mA, I_B = 2mA
– – 0.5 V
– – 0.9 V
Current Gain – Bandwidth Product
Collector–Base Capacitance
NTE287
f_T I_C = 10mA, V_CE = 20V, f = 100MHz 50 –
C_cb
V_CB = 20V, I_E = 0, f = 1MHz
––
– MHz
3 pF
NTE288
– – 6 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max