NTE287 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage, General Purpose Amplifier

NTE287 (NPN) & NTE288 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, V_CBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, V_EBO
NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation @ T_A = +25°C, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Device Dissipation @ T_C = +25°C, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/mW
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/mW
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE287
NTE288
Collector Cutoff Current
NTE287
NTE288
V_(BR)CEO I_C = 1mA, I_B = 0, Note 1
V_(BR)CBO I_C = 100µA, I_E = 0
V_(BR)EBO
I_E = 100µA, I_C = 0
I_CBO
V_CB = 200V, I_E = 0
Emitter Cutoff Current
NTE287
NTE288
I_EBO
V_EB = 6V, I_C = 0
V_EB = 3V, I_C = 0
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
300 – – V
300 – – V
6––V
5––V
– – 0.1 µA
– – 0.25 µA
– – 0.1 µA
– – 0.1 µA