NTE283 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Horizontal Output, Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Turn–On Time
Storage Time
Fall Time
t_on V_CC = 250V, I_C = 5A, I_B1 = 1A
t_s
V_CC = 250V, I_C = 5A,
t_f
I_B1 = –I_B2 = 1A
– 0.2 – µs
– 1.7 – µs
– 0.3 – µs
Fall Time
t_f
V_CC = 40V, I_C = 8A,
I_B1 = –I_B2 = 2.5A
–
– 1.0 µs
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case